smd type transistors h fe classification marking hm hl hk hfe 90 180 135 270 200 400 features high collector to emitter voltage: v ceo 100v. electrical characteristics ta = 25 parameter symbol testconditons min typ max unit base-emitter voltage * v be v ce =10v , i c = 10ma 550 620 650 mv collector cutoff current i cbo v cb = 100v, i e =0 100 na emitter cutoff current i ebo v eb =5v,i c =0 100 na v ce =1v , i c = 5.0ma 45 200 v ce =1v , i c = 100ma 90 200 400 collector-emitter saturation voltage * v ce(sat) i c = 500ma , i b = 50ma 0.3 0.6 v base-emitter saturation voltage * v be(sat) i c = 500ma , i b = 50ma 0.9 1.5 v output capacitance c ob v cb = 10v , i e =0,f=1.0mhz 10 pf transition product f t v ce = 10v , i e = -10ma 90 mhz *. pw 350s,duty cycle 2% dc current gain * h fe absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 100 v collector-emitter voltage v ceo 100 v emitter-base voltage v ebo 5v collector current i c 0.7 a collector current (pulse) * i c(pu) 1.2 a collector l power dissipation p c 2w junction temperature t j 150 storage temperature t stg -55to+150 *. pw 10ms,duty cycle 50% 2SD1006 sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type transistors smd type transistors smd type transistors smd type transistors smd type ic smd type smd type ic smd type smd type ic smd type smd type ic smd type product specification 4008-318-123
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